Fujitsu Simulates 3,000-Atom Nano device, a Threefold Increase
Supercomputer used to calculate electrical properties in approximately 20 hours.
Story content courtesy of Fujitsu, JP.
Fujitsu Laboratories Ltd. announces that it has successfully simulated the electrical properties of a 3,000-atom nano device - a threefold increase over previous efforts - using a supercomputer.
Fujitsu developed a calculation technique that reduces memory requirements while maintaining precision. Application at a 3000 atom scale have been made possible through a supercomputer using massively parallel processing. This technique enables the calculation of electrical properties, not only of individual nano device components, but of the interactions between these components. Expectations are that this development will contribute to faster practical implementations of nano devices. This simulation used massively parallel computing technology developed by the Japan Advanced Institute of Science and Technology (JAIST) and the Computational Material Science Initiative (CMSI).
Based on development of ever-more massive parallel computing technology that has kept pace with the performance increase of computers, Fujitsu is pursuing larger-scale and more efficient calculations. Within the next several years, Fujitsu aims to achieve nano device design via computers through total simulations of nano devices (on the scale of 10,000 atoms).
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