Authors: H. Cheng, S. Uno, K. Nakazato
Affilation: graduate school of engineering, Nagoya University, Japan
Pages: 487 - 490
Keywords: GAA-MOSFET, compact model, DIBL effect, ballistic and quasi-ballistic transport
Gate-All-Around metal-oxide-semiconductor field effect transistors (GAA-MOSFETs) have been attracting ever-increasing attention. The numerical calculations including quantum mechanical effect and ballistic transport of drain current can be evaluated quite accurately. However, it takes an immense amount of time, so the computation is practically impossible to be used in a circuit-level simulation. A compact model expressing drain current with one analytic formula in all operating regions is required. However, channel length has been scaled into two deca-nanometer size, and Short-Channel effects (SCEs) such as drain-induced barrier lowering (DIBL) should be taken into consideration in our model. In this work, we can obtain the electrostatic potential distribution in subthreshold region by solving cylindrical 2D Laplace equation. Then when considering only the lowest subband, the electron energy level along channel direction can be calculated using perturbation theory. Thus by using the compact model that we had proposed previously, we can represent an analytic compact model with DIBL effect expressing the drain current in all operating region.
Nanotech Conference Proceedings are now published in the TechConnect Briefs