Authors: D. Massoubre, L. Wang, J. Chai, G. Walker, L. Hold, M. Lobino, S. Dimitriev, A. Iacopi
Affilation: Griffith University, Australia
Pages: 416 - 419
Keywords: 3C-SiC, GaN, photonic, LED on Si, DBR on Si, photonic cristal
We present our recent progress in the hetero-epitaxial growth of single-crystalline cubic silicon carbide (3C-SiC) on large silicon (Si) wafer and its use for photonic applications. Single-crystalline 3C-SiC thin-film on Si opens new opportunities to develop photonic applications on Si, either as a growth template to integrate efficient gallium nitride (GaN)-based optoelectronic devices on Si, as a photonic material to perform ultra-fast (~GHz)electro-optical manipulation of light at telecom wavelengths or even for quantum photonic. We demonstrate the fabrication of 3C-SiC-based DBR on large Si wafer, as well as the growth of GaN-LED on SiC-on-Si.
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