Authors: K. Hamaidaa, M. Bouslamaa, M. Ghaffour, A. Ouerdane, Z. Lounis, A.A.S.S.A.L. Ia, A. Nouri, F. Besahraoui, A. Nouri
Affilation: university of temouchent, Algeria
Pages: 470 - 473
Keywords: AES, EELS, TRIM program, oxide In2O3, structure
Our results are based on the use of the analysis techniques such as the Auger Electron Spectroscopy (AES) and the Electron Energy Loss Spectroscopy (EELS) which are well appropriated to study the surface of point of view physical structure and chemical environment. The shape of AES and EELS spectra displayed the development of In2O3 oxide of small size on the irradiated area of InP semiconductor. Our experimental results related to the interaction process electrons-matter were associated to the simulation method TRIM (Transport and Range of Ions on Matter).
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