Authors: L. Luo, J.P. Walko, J.M. Johnson, S. Springer
Affilation: IBM, United States
Pages: 556 - 559
Keywords: PD-SOI, pass-gate, GIDL, SRAM
In a floating PD (partially depleted) SOI (silicon-on-insulator) transistor, the internal DC body potential is determined by the various body current components, mainly including diode current, gate-to-body oxide tunneling current (Igb), impact ionization current (II) and gate-induced drain leakage (GIDL) current. In logic circuits, the transistor is usually operated at off condition, linear condition or pass-gate condition. In this paper, we develop a new parameter extraction methodology for GIDL current to accurately model the pass-gate body potential in high K metal gate (HKMG) PD-SOI transistors. We also present the stability simulation result for 6-transistor (6T) static random-access memory (SRAM) cell to represent the +/- 50 mV pass-gate body potential uncertainty in the 22nm HKMG PD-SOI.
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