Papers:
BSIM6: Symmetric Bulk MOSFET Model
Chauhan Y.S., Karim M.A., Venugopalan S., Khandelwal S., Niknejad A., Hu C., University of California-Berkeley, US
BSIM6 Model is the next generation Bulk RF MOSFET Model. Model uses charge based core with all physical models adapted from BSIM4 model. Model fulfills all quality tests e.g. Gummel symmetry and AC symmetry etc. [...]
Design Methodology for Ultra Low-Power Analog Circuits using Next Generation BSIM 6 Compact Model
The design of analog circuits strongly relies on the accuracy of the models available in the circuit simulators. The recently proposed BSIM6 bulk MOSFET compact model is set to replace the hitherto widely used BSIM3 [...]
An analytical 2DEG model considering the two lowest subbands
A general 2DEG density model that considers the lowest two subbands (subband split) as well as the subthrehold region is derived and validated through comparison with the numerical (exact) solutions. Good agreement is obtained between [...]
Model the AlGaN/GaN High Electron Mobility Transistors
We developed a set of physics-based compact model of GaN HEMT for RF and high power applications. The model includes close-formed I-V, the C-V characteristics, high frequency noise characteristics, self heating effect, small signal and [...]
Compact Model for Intrinsic Capacitances in AlGaN/GaN HEMT Devices
We present a physics-based analytical compact model for intrinsic gate-source and gate-drain capacitances (CGS and CGD) in AlGaN/GaN HEMT these devices. The gate-channel capacitance Cch is derived from the unified 2-DEG charge density model developed [...]
Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
A wide range of application has made high-voltage (HV) MOSFETs evolve into application-specific structures. Trench-gate type HV-MOSFET is one of them; its user application space tends to fall on a larger power consumption domain, compared [...]
Modeling of DMOS Device for High-Voltage Applications Based on 2D Current Flow
Ueno F., Tanaka A., Miyake M., Iizuka T., Yamamoto T., Kikuchihara H., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP
High-voltage devices are utilized for a variety of applications, with application voltages ranging from a few volts to a few hundred volts. To develop efficient circuits for the variety of applications, accurate modeling of the [...]
Unified Modeling of Multigate MOSFETs Based on Isomorphic Modeling Principles
A compact, unified and analytical model is presented for the 3D electrostatics of nanoscale, multigate MOSFETs. The model is based on solutions of the 3D Laplace equation (subthreshold) and Poisson’s equation (above threshold), where suitable [...]
Modeling and Analysis of MOS Capacitor Controlled by Independent Double Gates
This paper, for the first time, explores the charcatersictics of MOS capacitor controlled by independent double gates by numerical simulation and analytical modeling for its possible use in RF circuit design as a varactor. By [...]
Critical review of CNTFET compact models
The very recent progress in manufacturing carbon nanotube transistors (CNTFETs) makes these transistors attractive for analog HF circuit applications for which adequate compact models accurately describing the transistor behavior are needed. So far, most models [...]
Physics based Analytical Model for a Pocket Doped p-n-p-n Tunnel Field Effect Transistor
Narang R., Saxena M., Gupta M., Gupta R.S., Gupta M., Gupta R.S., University of Delhi, South Campus, IN
Tunnel FET working on the principle of band-to-band tunneling mechanism has come up as a promising candidate with advantages of going below the limitation of 60mV/decade sub-threshold slope, and lower leakage current and thus capable [...]
Analytical Surface Potential Calculation in UTBSOI MOSFET with Independent Back-Gate Control
Khandelwal S., Chauhan Y.S., Karim M.A., Venugopalan S., Sachid A., Niknejad A., Hu C., Norwegian University of Science & Technlogy, NO
An analytical method for calculation of front- and back-gate surface-potential in ultra-thin body SOI MOSFETs is presented. The method allows surface-potential calculation with independent back-gate control which is very important in these devices. The calculated [...]
A Simplified Model for Dynamic Depletion in Doped UTB-SOI/DG-FinFETs
Compact modeling for doped-body MOSFETs, such as ultra-thin body (UTB) SOI and double-gate (DG) FinFETs, represents the most challenging task since it involves the Poisson’s solution with two boundary conditions, which is not available when [...]
Modeling of Chain History Effect based on HiSIM-SOI
Fukunaga Y., Miyake M., Toda A., Kikuchihara K., Baba S., Feldmann U., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M., Hiroshima University, JP
SOI-MOSFET is considered as a candidate for the next MOSFET generations with advanced technology due to its suppression of the short-channel effect and its high driving capability. However, it is known that the history effect [...]
HiSIM-SOTB: A Compact Model for SOI-MOSFET with Ultra-Thin Si-Layer and BOX
Miura-Mattausch M., Kikuchihara H., Feldmann U., Nakagawa T., Miyake M., Iizuka T., Mattausch H.J., Miura-Mattausch M., Hiroshima University, JP
The Silicon-On-Thin-Buried-Oxide (SOTB) transistor is a descendant of the conventional SOI MOSFET with thin Silicon and BOX layers. Many different structure and material variations are possible, where the choice of a thicker BOX may be [...]
Unified Regional Approach to High Temperature SOI DC/AC Modeling
This paper extends the recent model development [1] to include temperature effect in a range from room temperature to 300C. The extraction of the temperature coefficients used in the model and the prediction of the [...]
A Charge Based Non-Quasi-Static Transient Model for SOI MOSFETs
A non-quasi-static (NQS) transient model for SOI MOSFETs is presented based on charge based dc model which is extensively verified with various structure parameters. From the inversion charge and current-continuity equation, the partial differential equation [...]
Field-Based 3D Capacitance Modeling for sub-45-nm On-Chip Interconnect
Zhang A., Zhao W., Ye Y., He J., Chen A., Chan M., Beijing University of Aeronautics and Astronautics, CN
Considering both two-dimensional and three-dimensional single wire above plate, the proposed method decomposes the electric field into various regions and gives solutions for each part. The total ground capacitance is the summation of all components. [...]
Leakage current in HfO2 stacks: from physical to compact modeling
First, we present a Monte-Carlo model we developed for describing the charge transport in hafnium-based stacks, which allows reproducing voltage and temperature dependencies of the leakage current along with its statistical distribution. The model accounts [...]
On the Variability of HfOx RRAM: From Numerical Simulation to Compact Modeling
The trap-assisted conduction and filamentary switching mechanisms of the HfOx based resistive memory are studied. A numerical simulator is developed to reproduce the experimental I-V curves. Comparison with experiments shows that the cycle-to-cycle variation in [...]
Correlated statistical SPICE models for High-Voltage LDMOS Transistors based on TCAD statistics
Accurate process variation coverage within SPICE models has become an essential demand from the design community. These variations can be simulated most efficiently with statistics based models which avoid unrealistic pessimistic corners. Sufficient measurement data [...]
A Fully Automated Method to Create Monte-Carlo MOSFET Model Libraries for Statistical Circuit Simulations
Wang J., Trombley H., Watts J., Randall M., Wachnik R., IBM Semiconductor Research and Development Center, US
As the MOSFET continues to shrink, device-to-device variations become increasingly important. Therefore, it is critical to develop accurate, Monte-Carlo (MC) models that capture various device variations to allow statistical circuit simulations. To model the global [...]
Understanding and Modeling Quasi-Static Capacitance-Voltage Characteristics of Organic Thin-Film Transistors
Ucurum C., Goebel H., Helmut Schmidt University - University of the Federal Armed Forces Hamburg, DE
We have investigated the quasi-static capacitance-voltage (C-V) characteristics of pentacene-based organic thin-film transistors (OTFTs). Beside the hysteresis which is in accordance with previously reported I-V characteristics of OTFTs, the measured C-V characteristics include a plateau [...]
Boundary Condition Independence of Cauer RC Ladder Compact Thermal Models
This paper presents a methodology to create compact thermal models of electronic systems. The models have a form of Cauer RC ladders and the values of their elements can be attributed physical significance. The methodology [...]
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational (Volume 2)
Published: June 18, 2012
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4665-6275-2