Authors: B. Padmanabhan, D. Vasileska, S.M. Goodnick
Affilation: Arizona State University, United States
Pages: 679 - 681
Keywords: GaN HEMTs, electromechanical coupling
we present simulation results for GaN HEMTs in which the structure has additional AlN spacer layer thus completely modifying the electromechanical coupling approach.
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