Authors: J. Xu
Affilation: Peking University, China
Pages: 176 - 179
Keywords: FinFET device, process fluctuation, vertical nonuniformity, performance variation
Characteristic variation of FinFET due to Fin vertical nonuniformity is simulated in this paper, based on the compact device model. This vertical nonuniformity is generated during the real etching process and induces Fin thickness variation along the height direction. Therefore, the characteristics, such as threshold voltage, sub-threshold slope, on state current, off state current and total channel resistor are investigated influenced by Fin height and deviation angle. The impact of the deviation angle on both digital and analog circuit performance is also predicted.
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