Authors: Z. Liu
Affilation: PKU HKUST Shenzhen Institution of IER., China
Pages: 168 - 171
Keywords: FinFET, R-G current, stress, interface state, oxide trap, reliability issue
The reliability issue of the FinFET device is studied in details in this paper by the forward gated-diode R-G current method. Extraction of the stress induced interface states and oxide traps of FINFET is performed from a series of the R-G current measurement and developed physics expression. As the result, the interface states can be extracted by the relationship between the net increase value of the maximum substrate current (ΔIpeak) and stress time; and the oxide trap can be reflected by the drift of gate voltage (ΔVg) corresponding toΔIpeak.
Nanotech Conference Proceedings are now published in the TechConnect Briefs