Nanotech 2011 Vol. 2
Nanotech 2011 Vol. 2
Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational

Micro & Nano Reliability Chapter 3

FinFET reliability issue analysis by forward gated-diode method

Authors: Z. Liu

Affilation: PKU HKUST Shenzhen Institution of IER., China

Pages: 168 - 171

Keywords: FinFET, R-G current, stress, interface state, oxide trap, reliability issue

The reliability issue of the FinFET device is studied in details in this paper by the forward gated-diode R-G current method. Extraction of the stress induced interface states and oxide traps of FINFET is performed from a series of the R-G current measurement and developed physics expression. As the result, the interface states can be extracted by the relationship between the net increase value of the maximum substrate current (ΔIpeak) and stress time; and the oxide trap can be reflected by the drift of gate voltage (ΔVg) corresponding toΔIpeak.

ISBN: 978-1-4398-7139-3
Pages: 854
Hardcopy: $199.95