Authors: L. Wei, D.J. Frank, L. Chang, H.-S.P. Wong
Affilation: Massachusetts Institute of Technology, United States
Pages: 738 - 741
Keywords: carbon nanotube, transport model, quantum capacitance, electrostatic capacitance
In this paper, an analytical model of intrinsic carbon nanotube field effect transistors (CNFETs) is presented based on ballistic transport and careful analysis of the quantum capacitances, which requires neither iteration nor numeric integration. Essential physics, such as the drain-induced-barrier-lowing (DIBL) and quantum capacitances, are captured with a reasonable accuracy compared with numerical simulations. The model facilitates fast circuit simulation and system optimization.