Miura-Mattausch M., Miyake M., Kikuchihara H., Feldmann U., Amakawa S., Mattausch H.J., Miura-Mattausch M.
Hiroshima University, JP
Keywords: bulk MOSFET, MG-MOSFET, MOSFET family, SOI-MOSFET, surface potential
Many possible future device structures are investigated in parallel to obtain highest performance features. It has been shown that an SOI-MOSFET with a thin body enables both high device performances and suppression of statistical variations. Another possible approach to facilitate the scaling is to use the third dimension, so that multi-gate MOSFET structures using this approach are becoming attractive. This paper addresses the importance of circuit-simulation models, which are based on device physics and are realized by solving the Poisson equation explicitly. The HiSIM-model family, which covers all structures from bulk MOSFETs to multi-gate MOSFETs, is presented as an example fulfilling these requirements.
Journal: TechConnect Briefs
Volume: 2, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational
Published: June 13, 2011
Pages: 706 - 709
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4398-7139-3