Authors: V.A. Sivakov, F. Voigt, G. Brönstrup, G. Bauer, S.H. Christiansen
Affilation: Institute of Photonic Technology, Germany
Pages: 91 - 94
Keywords: silicon, nanowires, photoluminescence, etching
Strong room temperature visible (red-orange) photoluminescence (PL) has been observed in wet chemically etched heavily (10E19 cm-3) and lowly (10E15 cm-3) doped silicon nanowires (SiNWs). Our observations strongly suggest that visible light emission at room temperature of SiNWs is a result of their rough sidewall structures that are dominated by nanoscale features, visible in transmission electron microscopy. The quantum confinement hypothesis due to these features is our favoured explanation of the PL results. Additional optical properties of such a SiNW based material as given by absorption, transmission and reflectance are investigated in an integrating sphere. The PL spectra as well as overall optical properties change with varied etching conditions as a result of changing in SiNW morphology.
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