Authors: N.S. Ashraf, D. Vasileska, Z. Ma
Affilation: Arizona State University, United States
Pages: 126 - 129
Keywords: random dopant effects, random traps, drain current fluctuations
This paper presents a 3-D Ensemble Monte Carlo ( EMC ) based simulation for 45 nm gate length MOSFET to account for the fluctuations in drain current (saturation) and threshold voltage as causes of reliability failures integrating the effects of (1) statistical fluctuations in number and position of dopant atoms ( RDF ) in the channel region and (2) trapping or detrapping of single or multiple channel carriers in defect states positioned near the Si/SiO2 interface or as border traps in the oxide re-sulting in random telegraph noise/signal (RTN/RTS). The core of present EMC simulation relies on the more improved computation of Coulomb scattering due to trap’s interaction with a single or multiple carrier and also the simultaneous interaction of carrier-carrier and carrier-ions for both short range and long range interaction situa-tions. The relative change in drain current factor (in %) for first trap’s position (two traps are included in the simulation) along the channel from source to drain close to Si:SiO2 interface is calculated. For some random dopant distributions, simulations reveal a steady variation of amplitude change factor of drain current in the most region of the channel, implying that these random dopant distributions can be effectively used to reduce the effects of random telegraph noise due to interface and oxide traps.
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