Authors: H. Wang, R. Williams, L. Wagner, J. Johnson, P. Hyde, S. Springer
Affilation: IBM, United States
Pages: 757 - 760
Keywords: SOI, MOSFET, gate induced drain leakage, floating body effect
Gate Induced Drain Leakage (GIDL) current is one of the most important leakage components in Silicon-on-Insulator (SOI) MOSFET devices. The effect of GIDL current reported before mainly focused on device characteristics in the OFF-state or breakdown regime. Recently, the effect of body currents on SOI device hysteresis was analyzed with emphasis on impact ionization current. In this paper, we investigate and analyze the impact of GIDL current for devices in the active ON-state and its effect on history and ring delay results in 45nm PDSOI technology and beyond. Hardware data for GIDL current are presented. Simulation results from models with different GIDL components show significant differences in the resulting floating body potential and output characteristics for devices in ON-state, which affects both history and ring delay time. These results suggest that even for digital circuit simulations, GIDL current needs to be accurately included in optimizing the circuit for power and performance.
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