Authors: W.H. Chen, R. Lardé, E. Cadel, T. Xu, B. Grandidier, J.P. Nys, D. Stievenard, P. Pareige
Affilation: Groupe de Physique des Matériaux, France
Pages: 29 - 32
Keywords: dopant, nanowire, semiconductors, characterization, tools
The atom probe tomography is a three-dimensional high resolution analytical microscope that can map the distribution of atoms in semiconductor materials such as silicon nanowires.
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