Atomic scale dopant detection in an individual silicon nanowire by atom probe tomography

Chen W-H, Lardé R., Cadel E., Xu T., Grandidier B., Nys J.P., Pareige P.
Groupe de Physique des Matériaux, FR

Keywords: characterization, dopant, nanowire, semiconductors, tools

The atom probe tomography is a three-dimensional high resolution analytical microscope that can map the distribution of atoms in semiconductor materials such as silicon nanowires.

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Journal: TechConnect Briefs
Volume: 1, Nanotechnology 2010: Advanced Materials, CNTs, Particles, Films and Composites
Published: June 21, 2010
Pages: 29 - 32
Industry sector: Advanced Materials & Manufacturing
Topic: Materials Characterization & Imaging
ISBN: 978-1-4398-3401-5