Authors: X. Zhou, J. Zhang, L. Zhang, C. Ma, J. He, M. Chan
Affilation: peking university, China
Pages: 367 - 370
Keywords: nanoscale device, non-classical MOSFETs, DG-MOSFETs, modeling and simulation
In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented generic model predicts different DG MOSEET operation modes and the characteristics, which are well verified by the 2-D numerical simulator in different cases. We also analyze the model limitation and further improved direction.
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