Nanotech 2008 Vol. 3
Nanotech 2008 Vol. 3
Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation - Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Compact Analytical Threshold Voltage Model for Nanoscale Multi-Layered-Gate Electrode Workfunction Engineered Recessed Channel (MLGEWE-RC) MOSFET

Authors: R. Chaujar, R. Kaur, M. Saxena, M. Gupta, R.S. Gupta

Affilation: University of Delhi, India

Pages: 873 - 876

Keywords: ATLAS, DMG, MOSFET, modeling

In this paper, compact analytical threshold voltage model for multi-layered-gate electrode workfunction engineered recessed channel (MLGEWE-RC) MOSFET is presented and investigated using ATLAS device simulator. The novel device continues merits of recessed channel and dual material gate (DMG) architecture. It has been seen that MLGEWE-RC MOSFET exhibits significant enhancement in terms improved gate controllability over the channel, carrier transport efficiency and hence, the driving current and hot carrier effect immunity. Thus, MLGEWE-RC MOSFET design acts as an attractive solution for the ongoing integration process in analog design and high-speed integration circuits below the 65-nm technology node.

ISBN: 978-1-4200-8505-1
Pages: 940
Hardcopy: $159.95