Authors: N. Sadachika, T. Murakami, M. Ando, K. Ishimura, K. Ohyama, M. Miyake, H.J. Mattausch, M. Miura-Mattausch
Affilation: Hiroshima-University, Japan
Pages: 778 - 781
Keywords: floating-body, SOI, double-gate, MOSFET, modeling
Advanced MOSFETs exploit the carrier confinement to suppress the short-channel effect, which is realized by reducing the bulk layer thickness. The ongoing developments of the multi-gate MOSFET as well as the fully-depleted SOI-MOSFET with ultra thin silicon layer are proved to be applicable beyond the 50nm technology node. However, these advanced devices suffer from the floating-body effect caused by an unfixed body node, which plays an important role for the device performances. Here we present a modeling approach, based on a consistent potential description, how to simplify the problem of solving the Poisson equation with the floating-body node. The solution to the charge storage within the substrate is also discussed.