Sadachika N., Murakami T., Ando M., Ishimura K., Ohyama K., Miyake M., Mattausch H.J., Miura-Mattausch M., Miura-Mattausch M.
Hiroshima University, JP
Keywords: double-gate, floating-body, modeling, MOSFET, SOI
Advanced MOSFETs exploit the carrier confinement to suppress the short-channel effect, which is realized by reducing the bulk layer thickness. The ongoing developments of the multi-gate MOSFET as well as the fully-depleted SOI-MOSFET with ultra thin silicon layer are proved to be applicable beyond the 50nm technology node. However, these advanced devices suffer from the floating-body effect caused by an unfixed body node, which plays an important role for the device performances. Here we present a modeling approach, based on a consistent potential description, how to simplify the problem of solving the Poisson equation with the floating-body node. The solution to the charge storage within the substrate is also discussed.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 778 - 781
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4200-8505-1