Miura-Mattausch M., Chan M., He J., Koike H., Mattausch H.J., Miura-Mattausch M., Nakagawa T., Park Y.J., Tsutsumi T., Yu Z.
Hiroshima University, JP
Keywords: compact model, multi-gate MOSFET
We are reporting the construction of a common platform for compact model development based on the Verilog-A language and in particular a framework for efficient development of multi-gate MOSFET models for circuit simulation. Phenomena expected to become important for the multi-gate MOSFET generation are modeled on the basis of their physical origin. These phenomena are implemented into the specific multi-gate MOSFET models by plugging in modules from the common platform. Parasitic resistive and capacitive contributions are also modularized to represent the complete circuit performance of the multi-gate MOSFET model for efficient circuit development.
Journal: TechConnect Briefs
Volume: 3, Nanotechnology 2008: Microsystems, Photonics, Sensors, Fluidics, Modeling, and Simulation – Technical Proceedings of the 2008 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: June 1, 2008
Pages: 764 - 769
Industry sector: Sensors, MEMS, Electronics
Topic: Compact Modeling
ISBN: 978-1-4200-8505-1