Authors: G.R. Dholakia, A. Facchetti and T.J. Marks
Affilation: ELORET\ NASA Ames Research Center, United States
Pages: 530 - 533
Keywords: self asembly, OFETs, STM
This study elucidates the nature of the interface between the organic semiconductor and source-drain electrodes in OFET devices. The pitted and disordered monolayer results in poor mobilities for bottom contact OFETs. Reorientation of the molecules in multilayers by 90° results in efficient stacking and overlap of pi orbitals with an associated increase in top contact OFET mobility by three orders of magnitude.
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