Authors: C. Galup-Montoro, M.C. Schneider and A.I.A. Cunha
Affilation: Universidade Federal da Bahia - UFBA, Brazil
Pages: 633 - 636
Keywords: threshold voltage, intrinsic channel, undoped MOSFET, double gate MOSFET
The purpose of this paper is to extend a charge-based definition of threshold voltage, already applied to conventional bulk MOSFETs to undoped single gate and symmetric double gate MOSFETs. The threshold surface potential is determined as the value for which the mobile charge density is equal to the thermal charge density. The threshold voltage evaluated according to this definition is compared to the threshold voltage determined through the second derivative method.
Nanotech Conference Proceedings are now published in the TechConnect Briefs