Nanotech 2007 Vol. 3
Nanotech 2007 Vol. 3
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Consistency of compact MOSFET models with the Pao-Sah formulation: consequences for small-signal analysis
C. Galup-Montoro, M.C. Schneider and A.I.A. Cunha
Federal University of Santa Catarina, BR

HiSIM2.4.0: Advanced MOSFET model for the 45nm Technology Node and Beyond
M. Miura-Mattausch, N. Sadachika, M. Miyake, D. Navarro, T. Ezaki and H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, S. Miyamoto, R. Inagaki and Y. Furui
Hiroshima University, JP

A History of Electronic Traps on Silicon Surfaces and Interfaces
C-T Sah, B.B. Jie and Z. Chen
University of Florida, US

High Conentration of Interface Traps in MOS Transistor Modeling
Z. Chen, B.B. Jie and C-T Sah
Xiamen University, CN

Analytical Solutions for Long-Wide-Channel Thick-Base MOS Transistors I. Effects of Remote Boundary Conditions and Body Contacts
B.B. Jie and C-T Sah
Peking University, CN

Compact Modeling Framework for Short-Channel DG and GAA MOSFETs
H. Børli, S. Kolberg and T.A. Fjeldly
Norwegian University of Science and Technology, NO

Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs
J.G. Fossum and S. Chouksey
University of Florida, US

A Versatile Multigate MOSFET Compact Model: BSIM-MG
C. Hu, M. Dunga, C-H. Lin, D. Lu, A. Niknejad
University of California, Berkeley, US

3-D Analytical Models for the Short-Channel Effect Parameters in Undoped FinFET Devices
H.A. Hamid, B. Iniguez and J. Roig
Universitat Rovira i Virgili, ES

A PSP based scalable compact FinFET model
G.D.J. Smit, A.J. Scholten, N. Serra, R.M.T. Pijper, R. van Langevelde, A. Mercha, G. Gildenblat and D.B.M. Klaassen
NXP Semiconductors, NL

A Unified View of Drain Current Models for Undoped Double-Gate SOI MOSFETs
A. Ortiz-Conde and F.J. García Sánchez
Simón Bolívar University, VE

Analytic Charge Model for Double-Gate and Surrounding-Gate MOSFETs
B. Yu, H. Lu, W-Y Lu and Y. Taur

Unified Compact Model for Generic Double-Gate MOSFETs
X. Zhou, G.H. See, G.J. Zhu, K. Chandrasekaran, Z.M. Zhu, S.C. Rustagi, S.H. Lin, C.Q. Wei and G.H. Lim
Nanyang Technological University, SG

Carbon Nanotube Transistor Compact Model
J. Deng, G.C. Wan and H.-S. Wong
Stanford University, US

Modeling of FET Flicker Noise and Impact of Technology Scaling
C.-Y. Chen, Y. Liu, S. Cao, R. Dutton, J. Sato-Iwanaga, A. Inoue and H. Sorada
Stanford University, US

Modeling MOSFET Process Variation using PSP
J.S. Watts, Y-M Lee and J-E Park

Modeling Process Variations Using a Compact Model
R. Murali and J.D. Meindl
Georgia Tech, US

Simulating CMOS Circuits Containing Multiple FET Types Including the Geometric Dependence of Correlation between FET Types
J-E Park, C-H Liang, J. Assenmacher, J. Watts, S-J Park and R. Wachnik

Optimal Skew Corners for Compact Models
N. Lu

Impact of Gate Induced Drain Leakage and Impact Ionization Currents on Hysteresis Modeling of PD SOI Circuits
Q. Chen, S. Suryagandh, J-S Goo, J.X. An, C. Thuruthiyil and A.B. Icel
Advanced Micro Devices, US

Compact modeling of drain current in Independently Driven Double-Gate MOSFETs
D. Munteanu, J.L. Autran, X. Loussier and O. Tintori

Explicit Short Channel Compact Model of Independent Double Gate Mosfet
M. Reyboz, O. Rozeau, T. Poiroux, P. Martin, M. Cavelier and J. Jomaah

A Computationally Efficient Method for Evaluating Distortion in DG MOSFETs
R. Salazar, A. Ortiz-Conde and F.J. García Sánchez
Solid State Electronics Laboratory, VE

High Voltage MOSFET’s Modeling Review
Y. Ma, M-C Jeng and Z. Liu
Cadence Design System, Inc., US

Modeling the Geometry-Dependent Parasitics in Multi-Fin FinFETs
M. Chan and W. Wu

Analysis of Halo Implanted MOSFETs.
C.C. McAndrew and P.G. Drennan
Freescale Semiconductor, US

Modeling the electrical characteristics of FET-type sensors for biomedical applications
M.J. Deen and M.W. Shinwari
McMaster University, CA

Non-standard geometry scaling effects
M. Schröter and S. Lehmann
Technische Universität Dresden, DE

Theory of source-drain partitioning in MOSFET
A.S. Roy, C.C. Enz and J.M Sallese

Gummel Symmetry with Higher-order Derivatives in MOSFET Compact Models
G.H. See, X. Zhou, K. Chandrasekaran, S.B. Chiah, Z.M. Zhu, G.H. Lim, C.Q. Wei, S.H. Lin and G.J. Zhu
Nanyang Technological University, SG

A charge based compact flicker noise model including short channel effects
A.S. Roy and C.C. Enz

HiSIM-Varactor: Complete Surface-Potential-Based Model for RF Applications
M. Miyake, N. Sadachika, K. Matsumoto, D. Navarro, T. Ezaki, M. Miura-Mattausch, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi and S. Miyamoto
Hiroshima University, JP

PTAT voltage generator based on an MOS voltage divider
C. Rossi, C. Galup-Montoro and M.C. Schneider
Universidad de la Republica, UY

LINFET: A BSIM class FET model with smooth derivatives at Vds=0
L. Wagner and C.M. Olsen
IBM Systems Technology Group, US

Charge-Based Threshold Voltage Definition for Undoped Single Gate and Symmetric Double Gate MOSFETs
C. Galup-Montoro, M.C. Schneider and A.I.A. Cunha
Universidade Federal da Bahia - UFBA, BR

A Carrier-Based Analytic Model for Undoped Ultra-Thin-Body Silicon-on-Insulator (UTB-SOI) MOSFETs
J. He, W. Bian, Y. Tao, B. Li and Y. Chen
Peking University, CN

An Explicit Carrier-Based Compact Model for Surrounding-Gate MOSFETs
J. He, F. Liu, W. Bian, Y. Tao, W. Wu, K. Lu, T. Wang and M. Chan
Peking University, CN

Body Bias Dependency of Substrate Current and Its Modeling for SOI Devices
Y. Ma, M-C Jeng and Z. Liu
Cadence Design System, Inc., US

Compact Models for Asymmetric Double Gate MOSFETs
H.C. Morris, H. Abebe and E.C. Cumberbatch
San Jose State University, US

Transition Point Consideration for Velocity Saturating Four-terminal DG MOSFET Compact Model
T. Nakagawa, T. Sekigawa, T. Tsutsumi, M. Hioki, S. O’uchi and H. Koike

An Efficient Sectionalized Modeling Approach for Introduction of
V. Milovanovic and S. Mijalkovic
Delft University of Technology, NL

A Setup for Automatic MOSFET Mismatch Characterization under a Wide Bias Range
H. Klimach, C. Galup-Montoro and M.C. Schneider
Federal University of Santa Catarina, BR

An Approximate Explicit Solution to General Diode Equation
J. He, Y. Tao, C. Yang, M. Feng, B. Li, W. Bian and Y. Chen
Peking University, CN

Methodology and Design Kit Integration of a Broadband Compact Inductor Model
M. Erturk, R. Groves and E. Gordon

A Compact Model for Temperature and Frequency Dependence of Spiral Inductor
Y.Z. Xu and J.T. Watt
Altera Corporation, US

SPICE Modeling of Hook Shaped Idsat Curve for I/O 2.5V MOS Transistors
P.B.Y. Tan, A.V. Kordesch and O. Sidek
Silterra Malaysia Sdn. Bhd., MY

HiSIM- Replacement of BSIM4 in UDSM Circuit Simulations
Y. Iino and I. Pesic
Silvaco Japan, JP

Process Aware Hybrid SPICE Models using TCAD and Silicon Data
Y. Mahotin, S. Tirumala, X. Lin and D. Pramanik
Synopsys Inc., US

A Circuit Compatible Analytical Device Model for Nanowire FET Considering Ballistic and Drift-Diffusion Transport
B.C. Paul, R. Tu, S. Fujita, M. Okajima, T. Lee and Y. Nishi
Toshiba America Research, US

Numerical Modeling for Comparison of Emitter-Base Designs of InGaP/GaAs Heterojunction Bipolar Transistors
J.M. Lopez-Gonzalez
Universitat Politecnica de Catalunya, ES

Simulation of Buffer-Related Current Slump in AlGaN/GaN HEMTs
K. Horio
Shibaura Institute of Technology, JP

ISBN: 1-4200-6184-4
Pages: 732
Hardcopy: $139.95