Authors: Y.H. Yun, J.H. Jung and J.S. Choi
Affilation: Dongshin University, Korea
Pages: 368 - 371
Keywords: zinc gallate, Thin film, Photoluminescence
Field emission display (FED) is being expected as one of the most promising FPD technologies. The practical FED technologies are requiring the improvements in durability, quality and reduction in manufacturing cost for the low voltage operating oxide phosphors and field emission array (FEA). First of all, the low voltage FED phosphors with high quality under high vacuum and high current density are directly related to a stable operation of FEA and a desirable image quality. Zinc gallate (ZnGa2O4) phosphor has received much attention in its application to low voltage field emission display (FED) and vacuum fluorescent display (VFD), since it has good luminescent characteristics and stability. In addition, ZnGa2O4 has been expected as a potential candidate among oxide phosphors to substituting sulfide-based phosphors in low-voltage cathode luminescence device. In this study, we have synthesized the ZnGa2O4 thin film phosphors on ITO (indium-tin oxide) glass via a sol-gel spinning coating method using zinc acetate dihydrate, gallium (III) nitrate hydrate and 2-methoxiethanol as solution. The thin film phosphors on ITO glass were fired and annealed (in 3% H2/Ar) at 500℃ and 600℃. The AFM surface morphologies of the thin film phosphors on ITO glass showed the sharp-cornered particles and spherical particles. The XRD patterns of the phosphors, synthesized on ITO glass substrate, showed the (220) and (311) peaks of ZnGa2O4 phase. The ZnGa2O4 thin film phosphors exhibited the self-activated blue emission spectrum in the wavelength of 410nm and the weak UV emission spectrum near 370nm.