Authors: K. Wolff and U. Hilleringmann
Affilation: University of Paderborn, Germany
Pages: 185 - 188
Keywords: silicon, nanoparticle, nanogap, FET
A low-cost and simple fabrication technique is proposed to prepare a bottom-gate FET applying nanoparticles of silicon (nc-Si). Nanoparticles were contacted by metal nanogaps and characterised subsequently. Conclusions of contacting incorporated into further approaches of application of nanoparticles in FET applications. Therefor the silicon substrate was used as kind of "gate electrode". Modulation of conductance of the nc-Si could be attained. Measurements showed reasonable turn-off characteristics and ON/OFF-current ratios. Because of no requirement of a semiconductor substrate in principle and free alignment , design of circuits is possible at all.