Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1

Nano Electronics & Photonics Chapter 2

Silicon Nanoparticles contacted by metal nanogaps for FET applications

Authors: K. Wolff and U. Hilleringmann

Affilation: University of Paderborn, Germany

Pages: 185 - 188

Keywords: silicon, nanoparticle, nanogap, FET

A low-cost and simple fabrication technique is proposed to prepare a bottom-gate FET applying nanoparticles of silicon (nc-Si). Nanoparticles were contacted by metal nanogaps and characterised subsequently. Conclusions of contacting incorporated into further approaches of application of nanoparticles in FET applications. Therefor the silicon substrate was used as kind of "gate electrode". Modulation of conductance of the nc-Si could be attained. Measurements showed reasonable turn-off characteristics and ON/OFF-current ratios. Because of no requirement of a semiconductor substrate in principle and free alignment , design of circuits is possible at all.

ISBN: 1-4200-6182-8
Pages: 726
Hardcopy: $139.95

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