Nanotech 2007 Vol. 1
Nanotech 2007 Vol. 1
Technical Proceedings of the 2007 NSTI Nanotechnology Conference and Trade Show, Volume 1

Nano Electronics & Photonics Chapter 2

An Integrate and Fire Spiking Neuron Using Silicon Nano-Wire Technology

Authors: A. Bindal and S. Hamedi-Hagh

Affilation: San Jose State University, United States

Pages: 173 - 176

Keywords: silicon nano wire, silicon nano wire transistor, nano wire, nano wire transistor

This study presents a nanometer-scale Integrate and Fire Spike (IFS) neuron cell using vertically-grown, undoped silicon nano-wire transistors. The design cycle starts with determining individual metal gate work functions for each NMOS and PMOS transistor to produce a 300mV threshold voltage. Wire radius and effective channel length are varied to find a common body geometry that yields smaller than 1pA OFF current and produces maximum ON currents for both transistors. Once the optimal device dimensions are defined, a spike neuron cell is built; its transient performance, power dissipation and layout area are measured. Post-layout simulation results indicate that worst-case power dissipation of the neuron is 1.44µW if a single synapse is connected at its output and increases by 18nW per synapse at 500MHz. The neuron circuit occupies approximately 0.116µm2.

ISBN: 1-4200-6182-8
Pages: 726
Hardcopy: $139.95