Authors: J.S. Kim, Y.K. Kim, K.S. Yoon and T. Won
Affilation: Inha univ., Korea
Pages: 115 - 118
Keywords: kinetic Monte Carlo, Boron
In this work, we investigated the effect of Si pre-implantation on the low energy B implant and boron activation enhancement during the post-implant annealing process using KMC. For investigating Si pre implantation effect, Si implantation is performed with dosage of 3 x 1014 /cm2 and with implantation energy of 200 keV. Further, B implantation is performed with dosage of 4.5 x 1015/cm2 and implantation energy 2 keV, followed by annealing process is performed at 790 C for 18 sec.
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