Authors: J. Chen and J.J. Liou
Affilation: University of Central Florida, United States
Pages: 724 - 728
Keywords: inductors, q factors, rf
Recent growth in RF applications has increased the use of spiral inductors and thus demanded a more accurate model for such devices. In this paper, we develop a compact model for spiral inductors with symmetrical and asymmetrical terminals. Relevant and important physics such as the current crowding in metal line, coupling capacitance, frequency-dependent permittivity in oxide, and overlap parasitics are accounted for. Experimental data and results calculated from the existing inductor models are included in support of the model development.
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