Nanotech 2006 Vol. 3
Nanotech 2006 Vol. 3
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Compact Modeling Chapter 7

Charge-Based Formulation of Thermal Noise in Short-Channel MOS Transistors

Authors: V.C. Paim, C. Galup-Montoro and M.C. Schneider

Affilation: Federal University of Santa Catarina, Brazil

Pages: 876 - 879

Keywords: noise, thermal noise, short-channel MOSFET

In this communication we present a charge-based formulation for the thermal noise in short-channel MOS transistors. We arrive at a closed expression for the channel noise including velocity saturation for all the operating regions of the MOSFET. The derivation of the channel noise is based on the following dc approximations: (i) The Pao-Sah expression; (ii) The relationship between inversion charge density and channel potential given by the unified charge control model; (iii) The approximation mu = mu0/(1+E/Ecrit) for the dependence of the mobility on the longitudinal field. To calculate the drain current noise, we integrate the contributions of the elementary sources of diffusion noise along the channel using the impedance field method.

ISBN: 0-9767985-8-1
Pages: 913
Hardcopy: $119.95