Authors: V.C. Paim, C. Galup-Montoro and M.C. Schneider
Affilation: Federal University of Santa Catarina, Brazil
Pages: 876 - 879
Keywords: noise, thermal noise, short-channel MOSFET
In this communication we present a charge-based formulation for the thermal noise in short-channel MOS transistors. We arrive at a closed expression for the channel noise including velocity saturation for all the operating regions of the MOSFET. The derivation of the channel noise is based on the following dc approximations: (i) The Pao-Sah expression; (ii) The relationship between inversion charge density and channel potential given by the unified charge control model; (iii) The approximation mu = mu0/(1+E/Ecrit) for the dependence of the mobility on the longitudinal field. To calculate the drain current noise, we integrate the contributions of the elementary sources of diffusion noise along the channel using the impedance field method.
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