Authors: A.S. Roy and C.C. Enz
Affilation: Swiss Federal Institute of Technology, Lausanne (EPFL), Switzerland
Pages: 757 - 760
Keywords: MOSFET, mobility model, noise
This work presents a analytical model to calculate gate related noise parameters for any arbitrary velocity field relationship and discusses some finer point of diffusivity modeling and impact of those effect on gate related noise parameters.
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