Nanotech 2006 Vol. 3

Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3

Symbolic charge-based MOSFET model

C. Galup-Montoro and M.C. Schneider

*Federal University of Santa Catarina, BR*

Theory and Modeling Techniques used in PSP Model

G. Gildenblat, X. Li, H. Wang, W. Wu, A. Jha, R. van Langevelde, A.J. Scholten, G.D.J. Smit and D.B.M. Klaassen

*Pennsylvania State University, US*

An Improved MOS Transistor Model with an Integrated Mobility Model

J.R. Hauser

*N.C. State University, US*

Benchmark Tests on Conventional Surface Potential Based Charge-Sheet Models And the Advanced PUNSIM Development

J. He, Y. Song, X. Niu, G. Zhang, X. Zhang, R. Huang, M. Chan and Y. Wang

*Peking university, CN*

Accuracy of Surface-Potential-Based Long-Wide-Channel MOS Transistor Compact Models

B.B. Jie and C-T Sah

*University of Florida, US*

Advanced Compact MOSFET Model HiSIM2 Based on Surface Potentials with a Minimum Number of Approximation

M. Miura-Mattausch, D. Navarro, N. Sadachika, G. Suzuki, Y. Takeda, M. Miyake, T. Warabino, K. Machida, T. Ezaki, H.J. Mattausch, T. Ohguro, T. Iizuka, M. Taguchi, S. Kumashiro, R. Inagaki and S. Miyamoto

*Hiroshima University, JP*

Halo Doping: Physical Effects and Compact Modeling

S. Mudanai, R. Rios, W-K Shih, P. Packan and S-W Lee

*Intel Corp., US*

Compact Iterative Field Effect Transistor Model

M.S. Shur, V. Turin and D. Veksler, T. Ytterdal, B. Iñiguez and W. Jackson

*Rensselaer Polytechnic Institute, US*

Unified Approach to Bulk/SOI/UTB/s-DG MOSFET Compact Modeling

X. Zhou, K. Chandrasekaran, S.B. Chiah, W. Shangguan, Z. Zhu, G.H. See, S. Mani Pandey, G.H. Lim, S. Rustagi, M. Cheng, S. Chu and L-C Hsia

*Nanyang Technological University, SG*

BSIM4 and BSIM Multi-Gate Progress

M.V. Dunga, C.–H. Lin, X. Xi, S. Chen, D.D. Lu, A.M. Niknejad and C. Hu

*UC Berkeley, US*

A Charge-Based Compact Model of Double Gate MOSFET

A.S. Roy, C.C. Enz and J.M. Sallese

*CSEM, CH*

Precise 2D Compact Modeling of Nanoscale DG MOSFETs Based on Conformal Mapping Techniques

T.A. Fjeldly, S. Kolberg and B. Iñíguez

*Norwegian University of Science and Technology, NO*

Recent Upgrades and Applications of UFDG

J.G. Fossum, V.P. Trivedi, M.M. Chowdhury, S.H. Kim and W. Zhang

*University of Florida, US*

DC to RF Small-Signal Compact DG MOSFET model

B. Iñíguez, A. Lázaro, O. Moldovan, A. Cerdeira and T.A. Fjeldly

*Universitat rovira i Virgili (URV), ES*

An Explicit Quasi-Static Charge-Based Compact Model for Symmetric DG MOSFET

F. Prégaldiny, F. Krummenacher, J.-M. Sallese, B. Diagne and C. Lallement

*InESS, FR*

On the Modeling of the Current-Voltage Characteristics of a Symmetrical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor with an Undoped Body

M. Wong and X. Shi

*Hong Kong University of Science and Technology, HK*

Device Correlation: Modeling using Uncorrelated Parameters, Characterization Using Ratios and Differences

C.C. McAndrew and P.G. Drennan

*Freescale Semiconductor, US*

Modeling Small MOSFETs using Ensemble Devices

J.S. Watts, R. Pino and H. Trombley

*IBM, US*

Effects of Scaling on Modeling of Analog RF MOS Devices

Y. Liu, S. Cao, T.Y. Oh, B. Wu, O. Tornblad and R.W. Dutton

*Stanford University, US*

High-Voltage LDMOS Compact Modeling

M.B. Willemsen, R. van Langevelde and D.B.M. Klaassen

*Philips Research, NL*

Analog Compact Modeling for a 20-120V HV CMOS Technology

E. Seebacher, W. Posch, K. Molnar and Z. Huszka

*austriamicrosystems AG, AT*

Compact Modeling of Spiral Inductors for RF Applications

J. Chen and J.J. Liou

*University of Central Florida, US*

Development and Design Kit Integration of a Scalable and Statistical High Current Model for Advanced SiGe HBTs

R.M. Malladi, K.M. Newton and M.S. Schroter

*IBM Systems and Technology, US*

Charge-storage calculation for Si-based bipolar transistors from device simulation

M. Schröter and H. Tran

*UCSD, US*

Compact Modeling of Short Channel Double-Gate MOSFETs

H. Lu, X. Liang, W. Wang and Y. Taur

*Univ. California, San Diego, US*

DC and AC Symmetry Tests for MOSFET Models

C.C. McAndrew

*Freescale Semiconductor, US*

Scalable MOSFET Short-channel Charge Model in All Regions

G.H. See, S.B. Chiah, X. Zhou, K. Chandrasekaran, W. Shangguan, Z. Zhu, G.H. Lim, S.M. Pandey, M. Cheng, S. Chu and L-C Hsia

*NTU, SG*

Compact Modeling of Nonlinearities in Submicron MOSFETs

P.D. da Silva, F.R. de Sousa, C.G. Montoro and M.C. Schneider

*Federal University of Santa Catarina, BR*

On the Compact Modelling of Induced Gate Noise in the MOS Transistor

A.S. Roy and C.C. Enz

*Swiss Federal Institute of Technology, Lausanne (EPFL), CH*

Comprehensive Characterization and Analysis of RTS, 1/f, RF Noise and Power Performances of Schottky-Diode in Standard CMOS

Y.Z. Xiong, G.Q. Lo, J.L. Shi, M.B. Yu, W.Y. Loh and D.L. Kwong

*Institute of Microelectronics, Singapore, SG*

Two-Tone Distortion Modeling for SiGe HBTs Using the High-Current Model

R.R. Malladi, V. Borich, S.L. Sweeney, J. Rascoe, K.M. Newton, S. Venkatadri, J. Yang and S. Chen

*IBM Systems and Technology, US*

BSIM Model for MOSFET Flicker Noise Statistics: Technology Scaling, Area, and Bias Dependence

M. Ertürk, R. Anna, K.M. Newton, T. Xia and W.F. Clark

*IBM Systems and Technology Group, US*

Investigation of Substrate Current Effects and Modeling of Substrate Resistance Network for RFCMOS

J.C. Lee, R.B. Anna, S.L. Sweeney, L.H. Pan and K.M. Newton

*IBM Corporation, US*

TCAD-based Process Dependant HSPICE Model Parameter Extraction

Y. Mahotin, S. Tirumala, X-W Lin and D. Pramanik

*Synopsys, Inc., US*

Analysis and Modeling of NQS Effects in MOSFET’s

Y. Ma, M-C Jeng, H. Liang and Z. Liu

*Cadence Design Systems, Inc., US*

Compact Capacitance Model of LDMOS for Circuit Simulation

Y. Ma, P. Chen, H. Liang, J. Ma, M-C Jeng and Z. Liu

*Cadence Design Systems, Inc., US*

A Carrier Based Analytic Model for Undoped Surrounding-Gate MOSFETs

J. He, X. Zhang, M. Chan and Y. Wang

*Peking university, CN*

Compact Modeling of Doped Symmetric DG MOSFETs with Regional Approach

K. Chandrasekaran, Z.M. Zhu, X. Zhou, W. Shangguan, G.H. See, S.B. Chiah, S.C. Rustagi and N. Singh

*Nanyang Technological University, SG*

Explicit Threshold Voltage Based Compact Model of Independent Double Gate MOSFET

M. Reyboz, T. Poiroux, O. Rozeau, P. Martin and J. Jomaah

*CEA, FR*

Capacitance Model for Four-Terminal DG MOSFETs

T. Nakagawa, T. Sekigawa, T. Tsutsumi, M. Hioki, S. O’uchi and H. Koike

*National Institute of Advanced Industrial Science and Technology, JP*

A Computationally Efficient Method for Analytical Calculation of Potentials in Undoped Symmetric DG SOI MOSFET

O. Cobianu and M. Glesner

*Darmstadt University of Technology, DE*

Compact Model of drain-current in Double-Gate MOSFETs including carrier quantization and short-channel effects

X. Loussier, D. Munteanu, J.L. Autran, S. Harrison and R. Cerutti

*L2MP, FR*

Compact modeling and performance analysis of Double-Gate MOSFET-based circuits

O. Tintori, D. Munteanu, X. Loussier, J.L. Autran, A. Regnier and R. Bouchakour

*L2MP, FR*

Comparison of Three Region Multiple Gate Nanoscale Structures for Reduced Short Channel Effects and High Device Reliability

K. Goel, M. Saxena, M. Gupta and R.S. Gupta

*Professor, IN*

Compact Model for Short Channel Effects in Source/Drain Engineered Nanoscale Double Gate (DG) SOI MOSFETs

A. Kranti and G.A. Armstrong

*Queen’s University of Belfast, UK*

Compact Models for Double Gate and Surrounding Gate MOSFETs

H. Abebe, E. Cumberbatch, H. Morris and S. Uno

*San Jose State University, US*

SOI CMOS Compact Modeling based on TCAD Device Simulations

A. Botula, S. Furkay, D.C. Sheridan, J.M. Johnson and M-H Na

*IBM Corporation, US*

On Idlow with Emphasis on Speculative SPICE Modeling

Q. Chen, Z-Y Wu, A.B. Icel, J-S Goo, S. Krishnan, C. Thuruthiyil, N. Subba, S. Suryagandh, J.X. An, T. Ly, M. Radwin, J. Yonemura and F. Assad

*Advanced Micro Devices, US*

Dynamic Behavior Model for High-k MOSFETs

M.V. Dunga, X. Xi, A.M. Niknejad and C. Hu

*University of California, Berkeley, US*

A Simple Yet Accurate Mismatch Model For Circuit Simulation

Z. Jin, Y-M Lee, J.S. Watts, A.R. Bonaccio, G.J. Schroer and N.G. Pai

*IBM, US*

Enhanced Junction Capacitance Modeling

F.G. Anderson, R.M. Rassel and M.A. Lavoie

*IBM Microelectronics, US*

A Compact Model of Ballistic CNFET for Circuit Simulation

B.C. Paul, S. Fujita, M. Okajima and T. Lee

*Toshiba America Research Inc., US*

A Circuit-Compatible Model for Ballistic Silicon Nanowire Transistors

J. Chen

*Agere Systems, US*

Compact Modeling of Threshold Voltage in Nanoscale Strained-Si/SiGe MOSFETs

S. Nawal, V. Venkataraman and M.J. Kumar

*Indian Institute of Technology, IN*

Compact Model Methodology for Dual-Stress Nitride Liner Films in a 90nm SOI ULSI Technology

R.Q. Williams, D. Chidambarrao, J.H. McCullen, S. Narasimha, T.G. Mitchell and D. Onsongo

*IBM Corporation, US*

A transient circuit model for a phase change memory element

H.G.A. Huizing, D. Tio Castro, J.C.J. Paasschens and M.H.R. Lankhorst

*Philips, NL*

Static Analog Design Methodology

F. Guigues, F. Rudolff and E. Kussener

*L2MP UMR 6137 CNRS - ISEN-Toulon, FR*

Interrelations between Threshold Voltage Definitions and Extraction Methods

M.C. Schneider, C. Galup-Montoro, M.B. Machado and A.I.A. Cunha

*Federal University of Santa Catarina, BR*

A Unified Parameter Extraction Procedure for Scalable Bipolar Transistor Model Mextram

H-C Wu, S. Mijalkovic and J.N. Burghartz

*Delft university of technology, NL*

Charge-Based Formulation of Thermal Noise in Short-Channel MOS Transistors

V.C. Paim, C. Galup-Montoro and M.C. Schneider

*Federal University of Santa Catarina, BR*

ISBN: 0-9767985-8-1

Pages: 913

Hardcopy: $119.95

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