Analytical Models for Quantized Sub-Band Energy Levels and Inversion Charge Centroid of MOS Structures Derived from Asymptotic and WKB Approximations

Abebe H., Cumberbatch E., Morris H., Tyree V.
USC/ISI, US

Keywords: charge centroid, device modeling, MOSFET, quantum effect, sub-Band energy

Quantum effects on MOS structures investigation.

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Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 519 - 522
Industry sector: Sensors, MEMS, Electronics
Topic: Informatics, Modeling & Simulation
ISBN: 0-9767985-8-1