Ma M-W, Chao T-S., Kao K-S, Huang J-S, Lei T-F
National Chiao Tung University, TW
Keywords: fringing electric field, high-k offset spacer, S/D extension shift, SOI
In this paper, fully depleted (FD) SOI devices with S/D extension shift and high-k offset spacer were investigated in detail. The results show that the S/D extension shift can decrease Ioff significantly to reduce standby power dissipation, but Ion is also decreasing simultaneously. In order to overcome this disadvantage, the high-k offset spacer is used to increase Ion effectively due to the enhanced vertical fringing electric field. Consequently, a FD SOI device with 8nm S/D extension shift and TiO2 offset spacer can possess high Ion and ultra-low Ioff about 0.003 times lower than conventional SOI structure.
Journal: TechConnect Briefs
Volume: 3, Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 3
Published: May 7, 2006
Pages: 59 - 62
Industry sectors: Advanced Materials & Manufacturing | Sensors, MEMS, Electronics
Topics: Nanoelectronics, Photonic Materials & Devices
ISBN: 0-9767985-8-1