Authors: Y. Li and W-H Chen
Affilation: National Chiao Tung University, Taiwan
Pages: 20 - 23
Keywords: fin angle, bulk FinFET, 3D simulation, optimization, fabrication, characteristics
Bulk-finFET (fin-shaped field effect transistor) has been viewed as a good candidate for nanoscale VLSI device fabrication and nanoelectronic circuit design [1-5]. The structure features an excellent device characteristics compared with conventional planer structures. In fabricating the bulk-finFETs, the effect of a nonrectangular fin angle has to be carefully concerned that an ideal fin angle (90o) is not easy to be manufactured. Therefore, the short channel effect may be arisen due to the non-ideal manufacturing conditions and influence the device electrical properties. In this paper, the performance impacted by angles and heights of bulk FinFETs are comprehensively investigated to draw the optimal strategy in novel VLSI device technology and nanoelectronic circuit design.
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