Authors: S.-P. Kim, J.Y. Park, S.-C. Lee, K.-R. Lee, Y.-J. Chung, C.N. Whang
Affilation: Korea Institute of Science and Technology, Korea
Pages: 605 - 608
Keywords: MD simulation, interface structure, asymmetic intermixing, Low energy Ion scattering, Magnetic property
We investigated the intermixing behavior of Co-Al thin layers by a molecular dynmaic simulation. Asymmetic intermixing was observed: a severe intermixing occurs when Co was deposited on Al substrate while an atomically sharp interface forms between Al film and Co substrate. This asymmetric intermixing behavior was clearly confirmed by low energy ion scattering analysis and MOKE measurement of 0.5 monolayer deposited on single crystal substrate. This behavior would be crucial in manufacturing a spin valve devices composed of very thin transition metal multilayers. We also suggested a novel process for high performance spin valve devices based on this asymmetic intermixing phenomena.
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