Nanotech 2006 Vol. 1
Nanotech 2006 Vol. 1
Technical Proceedings of the 2006 NSTI Nanotechnology Conference and Trade Show, Volume 1

Coatings, Adhesives and Composites Chapter 3

Investigation of the Electronic Properties of the ZrO2 and HfO2 Thin Films by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy

Authors: D.A. Antonov, D.O. Filatov, G.A. Maximov, A.V. Zenkevich and Yu.Yu. Lebedinskii

Affilation: Nizhni Novgorod State University, Russian Federation

Pages: 258 - 260

Keywords: electronic properties, MeOx, HfO2, ZrO2, Combined AFM\\STM, thin films, silicide, MOS structures

The advantages of the combined AFM/STM technique for investigating the dielectric properties of ultrathin MeOx layers with high spatial resolution is shown. Particularly, MO2/Si (M=Hf, Zr) interface evolution upon heat treatments is explored. It is observed that vacuum annealing in the range Ò =800-900 °Ñ of ZrO2 films grown on Si results in the degradation ZrO2,HfO2 with formation of a Zr, Hf silicide layer which starts to grow from ZrO2/Si, HfO2/Si interface.

ISBN: 0-9767985-6-5
Pages: 871
Hardcopy: $119.95