Authors: D.P. Devineni, S. Stormo, W. Kempf, J. Schenkel, R. Behanan, S. Lea and D.W. Galipeau
Affilation: South Dakota State University, United States
Pages: 519 - 522
Keywords: nanowire, indium oxide, electric field enhanced oxidation
The objective of this work was to determine the feasibility of using EFEO to fabricate indium-oxide nanowires that could be used for sensing NO2 and O3. The effects of fabrication parameters such as indium film thickness, ambient relative humidity, atomic force microscope (AFM) tip bias voltage, tip force, scan speed and number of scans on the growth of nanowires were determined. Indium oxide nanowires were also released from the indium film on which it was grown. The chemical composition of the nanowires was verified using Auger electron spectroscopy. These results indicate that indium oxide nanowires can be grown and released from indium film. Future work will include characterizing their electrical and gas sensing properties.
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