Authors: Y.J. Chen, Y.H. Peng, P.S. Chen and C.H. Kuan
Affilation: National Taiwan University, Taiwan
Pages: 497 - 500
Keywords: germanium dots, nano, e-beam, CVD
Here we report the ability to fabricate well-aligned and mono-modal Ge dots on the silicon substrate with nano-trenches. It is started with electron beam lithography system (E-beam) to make patterns. Then reactive ion etching (RIE) is used to fabricate silicon trenches. At last, Ge dots are grown by ultra-high-vacuum chemical vapor deposition (UHV-CVD). In our experiments, it is observed that well-aligned and mono-modal Ge dots are only grown on the ridges. A model is also set up to explain the growth of Ge dots on the silicon substrate with nano-structures. Manipulation of nano-structures allows us to grow Ge dots at the predetermined position. It offers the potential applications of Ge-dots array for the implementation of nano-devices.
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