Nanotech 2005 Vol. 2
Nanotech 2005 Vol. 2
Technical Proceedings of the 2005 NSTI Nanotechnology Conference and Trade Show, Volume 2

Surfaces and Films Chapter 5

Low Temperature Deposition of High-Quality Nanometer-Thick Dielectric Films in an Electron Cyclotron Resonance (ECR) Plasma-Enhanced CVD System

Authors: L. Xie, J. Deng, S. Shepard, J. Tsakirgis and E. Chen

Affilation: Harvard University, United States

Pages: 328 - 331

Keywords: ultra-thin dielectric film, PECVD

One of the challenges facing in nanofabrication is to deposit dielectric films with thickness compared to the feature size under fabrication, typically in a range of nanometer, for the purposes such as gate dielectrics, surface passivation, diffusion barrier, charge storage gap, and etc. In addition, many applications use a variety of substrates that require deposition temperatures less than 200_0†2C without losing film qualities. In this work, we demonstrate the feasibility of using electron cyclotron resonance (ECR) plasma-enhanced CVD method to achieve ultra-thin (nanometer scale) dielectric thin films at temperatures less than 200_0†2C. In particular, Si3N4 films with thickness in sub-ten nanometer were successfully deposited at temperature

ISBN: 0-9767985-1-4
Pages: 808
Hardcopy: $109.95