Authors: A.M. Niknejad, M. Chan, C. Hu, B. Brodersen, J. Xi, J. He, S. Emami, C. Doan, Y. Cao, P. Su, H. Wan, M. Dunga and C.H. Lin
Affilation: University of California at Berkeley, United States
Pages: 339 - 342
Keywords: RF, microwave, compact modeling, passive device, interconnect modeling, substrate coupling
Compact modeling has been an integral part of the design of integrated circuits for digital and analog applications. The availability of scalable CMOS device models has enabled rapid simulation and design of present and future device technologies. Increasingly RF and microwave circuits designed with CMOS and SiGe technologies obviate the need for compact modeling in this domain. In this paper we will summarize the unique requirements of high-frequency compact modeling efforts by focusing on key components, such as passive devices, interconnect, substrate coupling and active devices.
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