Authors: X. Xi, J. He, M. Dunga, C-H Lin, B. Heyderi, H. Wan, M. Chan, A.M. Niknejad and C. Hu
Affilation: University of California at Berkeley, United States
Pages: 233 - 236
Keywords: MOSFETs, compact modeling, surfacepotential-plus model, small dimensional effects
This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based devices including SOI and double-gate MOSFETs.