WCM 2004 Invited Papers – TechConnect Briefs

Technology Limits and Compact Model for SiGe Scaled FETs

Stress relaxation in strained-Si MOSFETs can be significant in the presence of compressive stress imposed by trench isolation, especially for highly scaled active regions. Stress of the strained region is reduced by 2/3 when the [...]

Ballistic MOS Model (BMM) Considering Full 2D Quantum Effects

Yu Z., Zhang D., Tian L., Tsinghua University, CN

As the channel length of MOSFETs is shrunk to below 50 nm, 2D quantum mechanical (QM) e®ects becomes profound on both the carrier con¯nement in the transverse direction to the channel and the carrier transport, [...]

Recent Enhancements of MOS Model 11

van Langevelde R., Scholten A.J., Klaassen D.B.M., Philips Research Laboratories, NL

MOS Model 11 (MM11) is a surface-potential-based compact MOSFET model, which was introduced in 2001 (level 1100). An update of MM11, level 1101, was introduced in 2002. At the moment a second update of MM11, [...]

Noise Modeling with HiSIM Based on Self-Consistent Surface-Potential Description

Miura-Mattausch M., Hosokawa S., Navarro D., Matsumoto S., Ueno H., Mattausch H.J., Miura-Mattausch M., Ohguro T., Iizuka T., Taguchi M., Kage T., Miyamoto S., Hiroshima University, JP

Accurate prediction of noise characteristics is a prerequisite for RF-circuit simulation. We demonstrate here that the 1/f noise is modeled only with the trap density as a model parameter and the thermal drain noise is [...]

The Development of Next Generation BSIM for Sub-100nm Mixed-Signal Circuit Simulation

Xi X., He J., Heyderi B., Dunga M., Lin C.H., Heyderi B., Wan H., Chan M., Niknejad A.M., Hu C., University of California at Berkeley, US

This paper describes the next generation BSIM model for aggressively scaled CMOS technology. New features in the model include more accurate non-charge-sheet based physics, completely continuous current and derivatives, and extendibility to non-traditional CMOS based [...]

Unified Regional Approach to Consistent and Symmetric DC/AC Modeling of Deep-Submicron MOSFETs

Zhou X., Chiah S.B., Chandrasekaran K., Lim K.Y., Chan L., Chandrasekaran K., Chu S., Nanyang Technological University, SG

This paper presents our new developments of Xsim, a unified regional threshold-voltage-based model for deepsubmicron MOSFETs. New features include complete reformulation with bulk reference, including transverse electric field for effective mobility resulting in source–drain symmetry, [...]

Modeling and Characterization of Wire Inductance for High Speed VLSI Design

Arora N.D., Song L., Cadence Design Systems, US

Ever increasing circuit density, operating speed, faster on-chip rise times, use of low resistance Copper (Cu) interconnects, and longer wire lengths due to high level of integration in VLSI chip designs, have necessitated the need [...]

R3, an Accurate JFET and 3-Terminal Diffused Resistor Model

McAndrew C., Motorola, US

This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived [...]

Advanced MOSFET Modeling for RF IC Design

Cheng Y., Skyworks Solutions, US

In this paper, advanced MOSFET modeling for radiofrequency (RF) integrated-circuit (IC) design is discussed. An introduction of the basics of RF modeling of MOSFET is given first. A simple sub-circuit model is then presented with [...]

RF Noise Models of MOSFETs- A Review

Asgaran S., Jamal Deen M., McMaster University, CA

A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal noise modeling is presented. Although the modeling of MOSFET noise dates back to many years ago, the enhanced noise generated [...]

Bias Dependent Modeling of Collector-Base Junction Effects in Bipolar Transistors

Tran H., Schroter M., University of Technology Dresden, DE

An analytical formulation for the voltage and current dependent electric field in the collector of a bipolar transistor is presented. The new field expression is then employed for calculating the base-collector depletion capacitance and the [...]

Quasi-2D Compact Modeling for Double-Gate MOSFET

Chan M., Man T.Y., He J., Xi X., Lin C.H., Lin X., Lin C.H., Lin X., Ko P.K., Niknejad A.M., Hu C., Hong Kong University of Science and Technology, HK

This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without relying on the charge-sheet approximation. Due to the extremely thin silicon film used, the inversion charge thickness becomes comparable to the [...]

Compact, Physics-Based Modeling of Nanoscale Limits of Double-Gate MOSFETs

Chen Q., Wang L., Murali R., Meindl J.D., Georgia Institute of Technology, US

Compact, physics-based models of subthreshold swing and threshold voltage are presented for double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes. Applying these device models, threshold voltage variations in DG MOSFETs are comprehensively and exhaustively [...]

Floating Gate Devices: Operation and Compact Modeling

Pavan P., Larcher L., Marmiroli A., Università di Modena e Reggio Emilia, IT

This paper describes a possible approach to Compact Modeling of Floating Gate devices. Floating Gate devices are the basic building blocks of Semiconductor Nonvolatile Memories (EPROM, EEPROM, Flash). Among these, Flash are the most innovative [...]

Papers: