WCM 2005
WCM 2005
Technical Proceedings of the 2005 Workshop on Compact Modeling

Poster Papers Chapter 2

A Compact I-V Model for FinFETs Comprising Multi-Dimensional Electrostatics and Quantum Mechanical Effects

Authors: D. Zhang, Z. Yu and L. Tian

Affilation: Tsinghua University, China

Pages: 191 - 194

Keywords: 2D electrostatics, 2D quantum effects, charge, current

A compact I-V model for FinFET using ballistic transport with 1D electron gas is presented. The 2D electrostatics and 2D quantum mechanical (QM) effects at the cross-section are fully taken into account, which ensures the applicability to various types of FinFETs, from double-gate (DG) to Omega FinFET or nanowire FinFET. Compared to numerical simulations and experimental data, the model correctly predicts carrier density and terminal current of decanano-scaled devices.

ISBN: 0-9767985-3-0
Pages: 412