Nanotech 2004 Vol. 3
Nanotech 2004 Vol. 3
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3

Nano Devices and Systems Chapter 4

Investigation of Robust Fully-Silicided NMOSFETs for Sub-100 nm ESD Protection Circuits Design

Authors: J-W Lee, H. Tang and Y. Li

Affilation: Natl Nano Device Labs & Natl Chiao Tung Univ, Taiwan

Pages: 194 - 197

Keywords: nano-device, fully-silicided NMOSFETs, ESD, VLSI circuit design, SOC application

Electrostatic discharge (ESD) becomes an important issue in vary large scaled integrated (VLSI) circuit design and manufacture, especially for the ultra-thin oxide nano-devices [1-3]. It results from a fact that the gate oxide will be easily damaged during ESD stressing for their relatively high turn-on voltage of parasitic bipolar junction transistors. In this paper, new fully-silicided NMOSFETs are designed, fabricated, and studied; our investigation demonstrates that this new approach significantly improves sustaining ESD robustness which is than that of the conventional fully-silicided device. Furthermore, it has an excellent electrical efficiency than those of drain ballast resistor tied devices. We conclude that the proposed fully-silicided NMOSFET is very attractive to sub-100nm ESD protection VLSI circuit as well as system-on-chip (SOC) design.

ISBN: 0-9728422-9-2
Pages: 561
Hardcopy: $79.95