Nanotech 2004 Vol. 3
Nanotech 2004 Vol. 3
Technical Proceedings of the 2004 NSTI Nanotechnology Conference and Trade Show, Volume 3

Atomic and Mesoscale Modelling of Nanoscale Phenomena Chapter 3

First-Principles Molecular-Dynamics Simulations of a Hydrous Silica Melt: Hydrogen Diffusion Mechanisms and Electronic Properties

Authors: M. Pohlmann, H. Schober, M. Benoit and W. Kob

Affilation: Institut Laue-Langevin, France

Pages: 73 - 76

Keywords: hydrous silica, ab initio molecular dynamics, hydrogen diffusion, electronic structure

We study a sample of liquid silica containing 3.84 wt.% H20 with ab initio molecular dynamics simulation in its liquid state at temperatures of 3000 K and 3500 K. at these temperatures the liquid can be brought into equilibrium for several picoseconds. Hence we are able to investigate possible diffusion mechanisms for hydrogen atoms. It turns out that intermediate states in the liquid play a decisive role for the diffusion of hydrogen. Quenches of selected configurations to ambient temperature allow us to study the electronic structure of the material In particular we find electronic states in the band gap of amorphous silica. The correlation of these electronic states with the structural intermediate states that are present in our system and which we make responsible for the hydrogen diffusion has already been discussed for a long time.

ISBN: 0-9728422-9-2
Pages: 561
Hardcopy: $79.95