Authors: C. McAndrew
Affilation: Motorola, United States
Pages: 86 - 89
Keywords: JFET, diffused resistor, SPICE model, compact model, velocity saturation
This paper presents an improved compact model for diffused resistors and JFETs, valid over geometry, bias, and temperature. The model includes a physically based junction depletion model, a new and accurate velocity saturation model derived from data, and self-heating, which is important for low sheet resistance devices.
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