Authors: C. Le Royer, G. Le Carval and M. Sanquer
Affilation: CEA - LETI, France
Pages: 329 - 332
Keywords: nanodots, Coulomb blockade, memory, modeling
MOSFET Memories based on quantum dots have been investigated extensively because of their promising applications to non-volatile and low voltage memories. Among these memories, the Multi-Tunnel-Junction Memory (MTJM) appears to be a promising concept for both DRAM and Non-Volatile Memories (NVM). For this last application, we analyze by simulation the effects of the technological parameters (dots density and size, geometries) on the writing and retention characteristics of the MTJM cell.
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