Authors: J. Lin, Y. Kiat Seng, M. Jian Guo and D. Manh Anh
Affilation: Nanyang Technological University, Singapore
Pages: 380 - 383
Keywords: MOSFET, parameter extraction, small-signal model, subcircuit, RF, S-parameters, Y-parameters, Z-parameters, measure, simulation
The accurate method to extract a small-signal subcircuit model of MOSFET’s based on BSIM4 is presented, a novel approach to determining the parasitic inductances by Z-parameters, the intrinsic terminal resistance and capacitance by Y-parameters are shown. The procedure of the parameter extraction for RF MOSFET model is discussed and verified by experiment. The excellent correspondence is achieved between the modeled and measured S-parameters up to 15GHz for 0.18um CMOS process technology.
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