Authors: X. Gu, H. Wang, T.L. Chen and G. Gildenblat
Affilation: Penn State University, United States
Pages: 310 - 313
Keywords: substrate current, surface potential, MOSFET, compact model
A new substrate current model was developed which retains the simplicity of the original one but is applicable to all regions of the MOSFET operation with asymtotically correct behaviors and is well suited for use in surface-potential-based models.
Nanotech Conference Proceedings are now published in the TechConnect Briefs