Authors: J. He, X. Xi, M. Chan, K. Cao, A. Niknejad and C. Hu
Affilation: University of California, Berkeley, United States
Pages: 302 - 305
Keywords: Compact modeling, MOSFETs, accumulation layer, surface potential, capacitance
A Physics-Based Analytical Surface Potential and Capacitance Model of MOSFETs Operation from Strong Accumulation to Depletion region Jin He*+, Xuemei Xi*, Mansun Chan*, and Chenming Hu* (*Electronics Research Laboratory, Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, CA, 94720, USA) (+Institute of Microelectronics, Peking University, Beijing, 100871, P. R. China) e-mail email@example.com fax:01-510-643-2636 Abstract A physics-based analytical continuous model of MOSFET surface p potential and capacitance from strong accumulation to depletion is presented and the result is compared with 2-D numerical device simulation. Starting from the Poisson equation, an exact solution of the surface potential from accumulation to depletion is derived. Then, a continuous capacitance expression has been obtained and which gives a good agreement with 2-D device simulation. In addition, the importance of this model is demonstrated in the analysis of harmonic distortion.
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