Authors: M. Miura-Mattausch, D. Navarro, H. Ueno, H.J. Mattausch, K. Morikawa, S. Itoh, A. Kobayashi and H. Masuda
Affilation: Hiroshima University, Japan
Pages: 258 - 261
Keywords: MOSFET model, surface potential, charge-based modeling, sub-100nm technology
Extension of the gradual-channel approximation is presented with the surface-potential-based MOSFET modeling. All phenomena observed under the saturation condition are described by the potential increase in the pinch-off region in a self-consistent way. The charge induced by the high lateral electric field is demonstrated to become a major contributing factor in the charge distribution of small-size MOSFETs, instead of the conventional intrinsic part. This changes the charge partitioning of the inversion charge, which changes the high-frequency response of small-size MOSFETs as well.
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